brand logo

top image

Invited Speakers

Invited Speakers

The thought-leaders and visionaries in the field of amorphous, microcrystalline and nanocrystalline organic/inorganic semiconductors technology will take the Mott / Keynote / Invited stage at ICANS 27.
Don’t miss what these outstanding scholars say about their researches and the future of technology!

Mott Lecture [09:40~10:40, August 22, 2017 / (Mugunghwa Hall, 2F)]   

Sergei Baranovski

Sergei Baranovski

(Department of Physics, Philipps University Marburg, Germany)

Presentation Title
- Theoretical description of charge transport in disordered solids: to simulate or to think?

Abstract

Disordered materials, such as amorphous organic and inorganic semiconductors, chalcogenide glasses and ionic glasses, are commercially used in electrophotography, smartphone displays, solar cells, field transistors, optical memories, light-emitting diodes, solid batteries, etc. . Charge transport properties are decisive for all these applications. Therefore, understanding the charge transport mechanisms is of vital importance for device applications of disordered materials.

Intensive study of disordered materials is driven not only by their usefulness for valuable devices, but also by the interest of researchers in fundamental properties of such systems. Theory of charge transport has been for many years confined to crystalline solids. University courses and textbooks offer theories based essentially on the long-range atomic order. The Mott lecture at ICANS27 will present theoretical concepts developed for description of charge transport in solids without translational symmetry.

Theoretical research on charge transport in disordered solids is often essentially focused on computer simulations. Many deficiencies of numerical simulations will be highlighted in the Mott lecture. Computer simulations are useful, and sometimes unavoidable to check the ideas, but computers are not yet capable to take the full responsibility for theoretical research.

Keynote Speakers 1 [14:00~14:40, August 22, 2017 / (Mugunghwa Hall, 2F)]   

Sergei Baranovski

Chihee Chung

(President, Samsung Advanced Institute of Technology, Korea)

Presentation Title
- Material and Device Technology Innovation driving Electronics Industry

Abstract

The IT industry has been flourishing and thriving along with the continuous innovation of semiconductor technology. Semiconductor devices such as CPU and DRAM had led the evolution of the PC era from 1980s, and recently NAND flash and SoC semiconductors have played a key role in advancing mobile devices. Now, I would like to introduce how Samsung Electronics has kept a global leadership in semiconductor industry during last decades and what we are going to do to keep this business initiative.

These days, based upon much improved computing power and semiconductor technology, the next generation industrial revolution will be happening, involving artificial intelligence, autonomous driving, IoT, and healthcare area, as well as material development cycle time being improved a lot.

In this regard, I am going to introduce research areas of Samsung Corporate R&D Institute (SAIT) to realize innovative products and services, such as 2D Graphene, Quantum Dot, OLED, and Organic Photo Diode materials.

Keynote Speakers 2 [14:00~14:40, August 23, 2017 / (Mugunghwa Hall, 2F)]   

Mohammad Khaja Nazeeruddin

Mohammad Khaja Nazeeruddin

(Professor, École polytechnique fédérale de Lausanne, Switzerland)

Presentation Title
- Stable Perovskite Solar Cells by 2D/3D Interface Engineering

Abstract

Despite the impressive photovoltaic performances, perovskite solar cells are poorly stable under operation, failing by far the requirements for a widespread commercial uptake.1-3 Various technological approaches have been proposed to overcome the instability problem, which, while delivering appreciable improvements, are still far from a market-proof solution.4-5 In this talk we demonstrate stable perovskite devices by engineering an ultra-stable 2D/3D perovskite junction.
The 2D/3D composite delivers an exceptional gradually organized multidimensional structure that yields up to 11.2% photovoltaic efficiency in a low cost, hole-conductor free architecture and 20% in standard mesoporous solar cells. To demonstrate the up-scale potential of this technology we fabricate 10x10 cm2 solar modules by a fully printable, industrial-scale process delivering 11.2% efficient devices which are stable for >10,000 hours without efficiency loss measured under controlled standard conditions. This innovative architecture will likely enable the timely commercialization of perovskite solar cells.

Invited Speakers (As of May 29, 2017, in alphabetic order per last names)   

1 Tom Aernouts (IMEC, Belgium)
2 Erik Bakkers (Eindhoven University of Technology, Netherlands)
3 Mario Caironi (Istituto Italiano di Tecnologia, Italy )
4 Heeyeop Chae (Sungkyunkwan University, Korea)
5 Jun Chen (Sun Yat-sen University, China)
6 Fang-Chung Chen (National Chiao Tung University, Taiwan)
7 Yong Hoon Cho (KAIST, Korea)
8 Dong Hoon Choi (Korea University, Korea)
9 Carsten Deibel (TU Chemnitz, Germany)
10 Elvira Fortunato (Universidade Nova de Lisboa, Portugal)
11 Hiroyuki Fujiwara (Gifu University, Japan)
12 Hideo Hosono (Tokyo Tech, Japan)
13 Sang-Hyuk Im (Kyung Hee University, Korea)
14 Moon-Ho Jo (POSTECH, Korea)
15 Li Juan (Nankai University, China)
16 Sang Ouk Kim (KAIST, Korea)
17 Sunkook Kim (Sungkyunkwan University, Korea)
18 Ji-Seon Kim (Imperial College London, UK)
19 Yinghuan Kuang (Eindhoven University of Technology, Netherlands)
20 Xiaojun Kuo (Shanghai Jiao Tong University, China)
21 Takhee Lee (Seoul National University, Korea)
22 Hyoyoung Lee (Sungkyunkwan University, Korea)
23 Sang Yeol Lee (Cheongju University, Korea)
24 Kwang-Hee Lee (GIST, Korea)
25 Tae-Woo Lee (Seoul National University, Korea)
26 Ling Li (Chinese Academy of Sciences, China)
27 Zhaojun Liu (Southern University of Science and Technology, China)
28 Chris McNeill (Monash University, Australia)
29 Mitsuru Nakata (Japan Broadcasting Corporation, Japan)
30 Annamaria Petrozza (Istituto Italiano di Tecnologia, Italy )
31 Alla Reznik (Lakehead University, Thunder Bay, Canada)
32 John Robertson (University of Cambridge, UK)
33 Hitoshi Sai (AIST, Japan)
34 Tsuyoshi Sekitani (Osaka University, Japan)
35 Fukai Shan (Qingdao University, China)
36 Kevin Sivula (École Polytechnique Fédérale de Lausanne, Switzerland)
37 Arno Smets (Delft University of Technology, Netherlands)
38 Zhuo Sun (East China Normal University, China)
39 Kai Wang (Sun Yat-sen University, China)
40 Jianpu Wang (Nanjing Tech University, China)
41 SUN Xiaowei (Southern University of Science and Technology, China)
42 Kenji Yamamoto (Kaneka Corporation, Japan)
43 Linwei YU (Nanjing University, China)
44 Woojong Yu (Sungkyunkwan University, Korea)
45 Hsiao-Wen Zan (National Chiao Tung University, Taiwan)
46 Haizheng Zhong (Beijing Institute of Technology, China)